To provide a manufacturing method of a light-emitting layer for inorganic electroluminescence in which excess Cu component added as an acceptor can be treated by a method suitable for a thin film, without being removed by washing using a harmful aqueous solution, or the like, of sodium cyanide.

The manufacturing method of the light-emitting layer for the inorganic electroluminescence includes a process of film-forming ZnS:Cu, obtained by adding Cu of 1.0 atom% or more to ZnS on a substrate, a process of making the Cu component as chloride not contained in ZnS crystal grain, and a process of removing the chloride through rinsing.