Title:
磁気抵抗素子の製造方法
Document Type and Number:
Japanese Patent JP4908556
Kind Code:
B2
Abstract:
A method of manufacturing a magnetoresistive element includes a tunnel barrier forming step. The tunnel barrier forming step comprises a metal layer forming step of forming a metal layer to have a first thickness, a plasma processing step of performing a plasma treatment which exposes the metal layer to a plasma of an inert gas to etch the metal layer to have a second thickness smaller than the first thickness, and an oxidation step of oxidizing the metal layer having undergone the plasma treatment to form a metal oxide which forms a tunnel barrier.
Inventors:
Choi Young Sook
Application Number:
JP2009189570A
Publication Date:
April 04, 2012
Filing Date:
August 18, 2009
Export Citation:
Assignee:
Canon ANELVA Corporation
International Classes:
H01L43/12; H01L21/3065; H01L21/8246; H01L27/105; H01L43/08
Domestic Patent References:
| JP2006054257A | ||||
| JP2006310701A | ||||
| JP2007294737A | ||||
| JP2006024349A | ||||
| JP2001034919A | ||||
| JP2007124340A | ||||
| JP2008016739A |
Foreign References:
| WO2008012959A1 |
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu