Title:
磁気抵抗効果素子の製造方法
Document Type and Number:
Japanese Patent JP5361201
Kind Code:
B2
Abstract:
A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnetization pinned layer or on the magnetization free layer, and a functional layer arranged in the magnetization pinned layer, in the magnetization free layer, in the interface between the magnetization pinned layer and the intermediate layer, in the interface between the intermediate layer and the magnetization free layer, or in the interface between the magnetization pinned layer or the magnetization free layer and the cap layer, and a pair of electrodes which pass a current perpendicularly to a plane of the magnetoresistive film, in which the functional layer is formed of a layer including nitrogen and a metal material containing 5 atomic % or more of Fe.
Inventors:
Hideaki Fukuzawa
Shuichi Murakami
Hiromi Yuasa
Yoshihiko Fuji
Shuichi Murakami
Hiromi Yuasa
Yoshihiko Fuji
Application Number:
JP2008019366A
Publication Date:
December 04, 2013
Filing Date:
January 30, 2008
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L43/08; G01R33/09; G11B5/39; H01F10/32; H01L21/8246; H01L27/105; H01L43/12
Domestic Patent References:
| JP2004006589A | ||||
| JP2004179219A | ||||
| JP2002190631A |
Attorney, Agent or Firm:
Fujiwara Yasutaka