Title:
磁気抵抗素子の製造方法、及び磁気抵抗素子
Document Type and Number:
Japanese Patent JP6616803
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetoresistive element which has high insulation layer selective ratio for a free layer.SOLUTION: A manufacturing method of a magnetoresistive element includes a step (left figure and center figure) of preparing a substrate 201 in which a free layer 206, a fixed layer 204 disposed below a first magnetic layer, and a barrier layer, which is an insulation layer, disposed between the free layer 206 and the fixed layer 204 are formed; and a step (right figure) of processing the free layer 206 by plasma etching. An insulation layer 702 which constitutes the barrier layer contains a Ta element or a Ti element.SELECTED DRAWING: Figure 7
Inventors:
Makoto Satake
Jun Hayakawa
Tsutomu Tezuka
Shimada Go
Naohiro Yamamoto
Atsushi Yoshida
Jun Hayakawa
Tsutomu Tezuka
Shimada Go
Naohiro Yamamoto
Atsushi Yoshida
Application Number:
JP2017119375A
Publication Date:
December 04, 2019
Filing Date:
June 19, 2017
Export Citation:
Assignee:
Hitachi High-Technologies Corporation
International Classes:
H01L43/12; H01L21/8239; H01L27/105; H01L29/82; H01L43/08; H01L43/10
Domestic Patent References:
| JP2012204683A | ||||
| JP2012129225A | ||||
| JP2012114442A | ||||
| JP2004214459A | ||||
| JP2009512204A |
Attorney, Agent or Firm:
Polaire Patent Business Corporation