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Patent Searching and Data


Title:
特性が制御された多層構造物の製造方法
Document Type and Number:
Japanese Patent JP2009531205
Kind Code:
A
Abstract:
The method involves depositing a elementary active layer (A) on a substrate (S), and depositing another elementary active layer (B) on the former elementary active layer. Ionic elements are implanted on the elementary active layers across a resist by a plasma immersion technique to modify properties of respective layers for obtaining a multilayer structure with controlled properties, where the resist is a monolayer or multilayer photosensitive mask (M).

Inventors:
French, Daniel
Bumper, David Jean Maurice
Peltier, Jack Henri Lucian
Milagria, salvator
Application Number:
JP2009502084A
Publication Date:
September 03, 2009
Filing Date:
March 29, 2007
Export Citation:
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Assignee:
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE(CNRS)
UNIVERSITE JOSEPH FOURIER-GRENOBLE 1
International Classes:
B32B9/00; B82B3/00; G11B5/84; H01L21/3205; H01L23/52; H05K3/10; H05K3/46
Domestic Patent References:
JPH0945685A1997-02-14
JP2005228852A2005-08-25
JPH02295137A1990-12-06
JPH1041300A1998-02-13
JP2002288813A2002-10-04
JP2002350599A2002-12-04
Foreign References:
US6383574B12002-05-07
Attorney, Agent or Firm:
Shoichi Hirose