Title:
中性子半導体検出構造、中性子半導体検出器、及び中性子半導体検出構造の製造方法
Document Type and Number:
Japanese Patent JP6856214
Kind Code:
B2
Abstract:
To provide a neutron semiconductor detection structure, a neutron semiconductor detector capable of improving the detection efficiency of neutron, and a manufacturing method of neutron semiconductor detection structure.SOLUTION: A neutron semiconductor detection structure 10 includes: a substrate which has a sapphire substrate 11 and a GaN buffer layer 12; and a neutron detection part 40 formed on the substrate for capturing an incident neutron n. The neutron detection part 40 includes: a GaN body 41 containing gallium nitride (GaN); and plural B-containing bodies 42 containing at least one of boron nitride (BN) and boron gallium nitride (BGaN). The respective B-containing bodies 42 are embedded in the GaN body 41.SELECTED DRAWING: Figure 3
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| WO/2006/059035 | SEMICONDUCTOR NEUTRON DETECTOR |
| JP5276258 | Neutron measuring device |
Inventors:
Takayuki Nakano
Shigefusa Chichibu
Kazunobu Kojima
Shigefusa Chichibu
Kazunobu Kojima
Application Number:
JP2017068686A
Publication Date:
April 07, 2021
Filing Date:
March 30, 2017
Export Citation:
Assignee:
National University Corporation Shizuoka University
Tohoku University
Tohoku University
International Classes:
G01T3/08
Domestic Patent References:
| JP2000150956A | ||||
| JP2002503389A |
Foreign References:
| US20140264048 |
Other References:
中野貴之 ほか,BGaN半導体材料を用いた新規熱中性子検出器の提案と開発,日本原子力学会 2017年秋の大会,一般社団法人 日本原子力学会,2017年 9月,2L15
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuji Suwa
Yuji Suwa