Title:
窒化物結晶基板の製造方法
Document Type and Number:
Japanese Patent JP6978343
Kind Code:
B2
Abstract:
To manufacture a nitride crystal substrate which has good crystallinity by making a substrate for crystal growth larger in diameter and then using the same.SOLUTION: The process of preparing the substrate for crystal growth comprises the processes of: arranging a plurality of seed crystal substrates each made of a single crystal of group III nitride; epitaxially growing a first layer made of the single crystal of group III nitride on a principal face and a side face of each of the plurality of seed crystal substrates, and joining side faces of adjacent seed crystal substrates together by the first layer under a first growth condition such that a growing rate in a direction along a normal of the principal face of the seed crystal substrate is higher than a growing rate in a direction along the principal face of the seed crystal substrate; and epitaxially growing a second layer made of a single crystal of group III nitride on the first layer under a second growth condition such that the growing rate in the direction along the normal of the principal face of the seed crystal substrate is equal to or less than the growing rate in the direction along the principal face of the seed crystal substrate. The process of growing the crystal film comprises growing a crystal film made of a single crystal of group III nitride on the substrate for crystal growth.SELECTED DRAWING: Figure 2
Inventors:
Takehiro Yoshida
Application Number:
JP2018034763A
Publication Date:
December 08, 2021
Filing Date:
February 28, 2018
Export Citation:
Assignee:
SIOX Co., Ltd.
Sumitomo Chemical Co., Ltd.
Sumitomo Chemical Co., Ltd.
International Classes:
C30B29/38; C30B25/20; H01L21/205; H01L21/304
Domestic Patent References:
| JP2006315947A | ||||
| JP2017200858A | ||||
| JP2017100936A | ||||
| JP2008542183A |
Foreign References:
| WO2017154701A1 |
Attorney, Agent or Firm:
Fukuoka Masahiro
Hideo Tachibana
Hideo Tachibana