Title:
MANUFACTURING METHOD OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2012114226
Kind Code:
A
Abstract:
To provide a manufacturing method of a nonvolatile semiconductor memory device capable of suppressing power consumption and reducing switch malfunctions using a carbon nanotube as a variable resistive element.
A manufacturing method of a nonvolatile semiconductor memory device of an embodiment includes: a step of forming a lower electrode on a semiconductor substrate 9; a step of forming a variable resistance layer 11 containing a carbon nanotube on the lower electrode; an irradiation step of irradiating the variable resistance layer with an electron beam or a photon beam; and a step of forming an upper electrode on the variable resistance layer after the irradiation step.
Inventors:
WATANABE KATSURA
NAKAO SHINICHI
OTSUKA KENICHI
NAKAO SHINICHI
OTSUKA KENICHI
Application Number:
JP2010261634A
Publication Date:
June 14, 2012
Filing Date:
November 24, 2010
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L27/105; H01L45/00; H01L51/05; H01L51/30
Attorney, Agent or Firm:
Hiroaki Sakai