Title:
パターン化基板の製造方法
Document Type and Number:
Japanese Patent JP7027674
Kind Code:
B2
Abstract:
A method for preparing a patterned substrate includes selectively etching any one segment block of a self-assembled block copolymer from a laminate having a substrate; wherein a block copolymer membrane is formed on the substrate and the substrate contains the self-assembled block copolymer. According to the method, the self-assembled pattern of the block copolymer can be efficiently and accurately transferred on the substrate to prepare a patterened substate.
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Inventors:
Ryu, Hyunju
Yun, Sun Sue
Ku, Sejin
Yun, Sun Sue
Ku, Sejin
Application Number:
JP2020511762A
Publication Date:
March 02, 2022
Filing Date:
September 13, 2018
Export Citation:
Assignee:
LG HAUSYS,LTD.
International Classes:
H01L21/3065
Domestic Patent References:
| JP2004119839A | ||||
| JP2016539237A | ||||
| JP2016105455A |
Foreign References:
| WO2017042312A1 | ||||
| WO2017068259A1 | ||||
| KR1020150113438A |
Other References:
BORAH, D. et al.,Plasma etch technologies for the development of ultra-small feature size transistor devices,Journal of Physics D:Applied Physics,英国,IOP publishing Ltd,2011年,Vol. 44, No. 17,pp. 174012-1 - 174012-12
TING, Yuk-Hong et al.,Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography,Journal of Vacuum Science & Technology B,米国,American Vacuum Society,2008年,Vol. 26, No. 5,pp. 1684-1689
TING, Yuk-Hong et al.,Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography,Journal of Vacuum Science & Technology B,米国,American Vacuum Society,2008年,Vol. 26, No. 5,pp. 1684-1689
Attorney, Agent or Firm:
Longhua International Patent Service Corporation
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