Title:
半導体装置の作製方法、剥離方法
Document Type and Number:
Japanese Patent JP4916680
Kind Code:
B2
Abstract:
A first layer (an insulating layer), a second layer (a metal layer), and a third layer (an insulating layer) are formed over a substrate. Then, a fourth layer including a semiconductor element is formed over the third layer. After applying an organic resin film covering the fourth layer, laser light is irradiated to sections of a rear surface side of the substrate. By irradiating the second layer with laser light, the state of being covered with the organic resin film can be maintained at the same time as forming a space under the organic resin film by ablating (alternatively, evaporating or breaking down) an irradiated region of the second layer, to cause a lift in the film in a periphery thereof.
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Inventors:
Masafumi Morisue
Ryosuke Watanabe
Junya Maruyama
Yamada Daiki
Ryosuke Watanabe
Junya Maruyama
Yamada Daiki
Application Number:
JP2005192520A
Publication Date:
April 18, 2012
Filing Date:
June 30, 2005
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/02; H01L27/12
Domestic Patent References:
| JP2003163338A | ||||
| JP2004228373A | ||||
| JP2004220591A |