To solve a problem that, in a method for manufacturing a photoelectric converter employing crystal semiconductor particles, the crystal semiconductor particles are difficult to be densely arranged.
The method for manufacturing a photoelectric converter is provided, in which crystal semiconductor particles each consisting of a first conductive type central portion and a second conductive type outer wall for establishing pn bonding are arranged and adhered onto a substrate. An adhesive is applied to the surface of the substrate, on which the crystal semiconductor particles are scattered for temporary adhesion. Then the substrate is heated at a temperature higher than an eutectic temperature of the crystal semiconductor particles, and while volatilizing or after volatilizing the adhesive, the crystal semiconductor particulates are firmly adhered onto the substrate. Thereafter, the resultant is impregnated with an insulator consisting of glass compositions to fill voids among the crystal semiconductor particles, thereby making reaction between the glass material of the insulator and the particulate crystal semiconductor, for removal of the second conductivity outer wall at a portion contacting the insulator in the vicinity of the bonding portion between the substrate and the particulate semiconductor.
COPYRIGHT: (C)2003,JPO
Jun Fukuda
Hisao Arimune
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