Title:
光電変換装置の製造方法及び製膜装置
Document Type and Number:
Japanese Patent JP5324966
Kind Code:
B2
Abstract:
A process for producing a high-performance photovoltaic device by depositing a high-quality crystalline silicon layer, and a deposition apparatus for depositing the high-quality crystalline silicon layer. A process for producing a photovoltaic device that comprises forming a crystalline silicon-based photovoltaic layer comprising an i-layer on a substrate using a plasma-enhanced CVD method, wherein formation of the i-layer comprises an initial layer deposition stage and a bulk i-layer deposition stage, and the initial layer deposition stage comprises depositing the initial layer using a silane-based gas flow rate during the initial layer deposition stage that is lower than the silane-based gas flow rate during the bulk i-layer deposition stage, with the deposition time for the initial layer deposition stage set to not less than 0.5% and not more than 20% of the total deposition time for the i-layer, and with the SiH* emission intensity during the initial layer deposition stage not more than 80% of the stabilized SiH* emission intensity during the bulk i-layer deposition stage.
Inventors:
Hiroomi Miyahara
Kengo Yamaguchi
Kengo Yamaguchi
Application Number:
JP2009053465A
Publication Date:
October 23, 2013
Filing Date:
March 06, 2009
Export Citation:
Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
H01L31/04; H01L21/205; H01L31/048; H01L31/06; H01L31/076; H01L31/077
Domestic Patent References:
| JP2002246317A | ||||
| JP3672754B2 | ||||
| JP62093382A | ||||
| JP60257516A |
Attorney, Agent or Firm:
Noriharu Fujita
Kunio Ueda
Kunio Ueda