Title:
光電変換装置の製造方法
Document Type and Number:
Japanese Patent JP5442100
Kind Code:
B2
Abstract:
The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
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Inventors:
Seiichi Tamura
Hiroshi Yasuhara
Takeshi Ichikawa
Ryuichi Mishima
Hiroshi Yasuhara
Takeshi Ichikawa
Ryuichi Mishima
Application Number:
JP2012277433A
Publication Date:
March 12, 2014
Filing Date:
December 19, 2012
Export Citation:
Assignee:
Canon Inc
International Classes:
H01L27/146; H04N5/335; H04N5/369; H04N5/374
Domestic Patent References:
| JP2002170945A | ||||
| JP2001298176A | ||||
| JP2001015725A | ||||
| JP2000150848A | ||||
| JP2264464A |
Attorney, Agent or Firm:
Yasunori Otsuka
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu
Shiro Takayanagi
Yasuhiro Otsuka
Shuji Kimura
Osamu Shimoyama
Nagakawa Yukimitsu