Title:
多結晶シリコンの製造方法
Document Type and Number:
Japanese Patent JP4336246
Kind Code:
B2
Abstract:
A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.
Inventors:
Kim Young-Ju
Application Number:
JP2004148023A
Publication Date:
September 30, 2009
Filing Date:
May 18, 2004
Export Citation:
Assignee:
LG Display Company Limited
International Classes:
G02F1/1368; H01L21/20; C30B28/10; C30B29/06; G02F1/13; G02F1/136; G03F7/00; H01L21/00; H01L21/027; H01L21/268; H01L21/306; H01L21/324; H01L21/336; H01L21/77; H01L21/84; H01L23/544; H01L29/786
Domestic Patent References:
| JP200377834A | ||||
| JP200386505A | ||||
| JP2003188099A | ||||
| JP2003318111A | ||||
| JP2004214615A | ||||
| JP7335906A |
Attorney, Agent or Firm:
Masao Okabe
Nobuaki Kato
Kazuo
Shinichi Usui
Takao Ochi
Teruhisa Motomiya
Asahi Shinmitsu
Katsumi Miyama
Nobuaki Kato
Kazuo
Shinichi Usui
Takao Ochi
Teruhisa Motomiya
Asahi Shinmitsu
Katsumi Miyama