Title:
ダイレクトフォトリソグラフィーを用いた、放射線検出器のためのセグメント化接触子の製造方法
Document Type and Number:
Japanese Patent JP2009527922
Kind Code:
A
Abstract:
A method is provided for fabricating contacts on semiconductor substrates by direct lithography that results in durable adhesion of the electrodes, increased interpixel resistance and the electrodes which act as a blocking contact, thereby providing for improved energy resolution in a resultant radiation detector.
Inventors:
Chen Henry
Rupasob Sergey
Awadara salah
Rupasob Sergey
Awadara salah
Application Number:
JP2008556380A
Publication Date:
July 30, 2009
Filing Date:
February 21, 2007
Export Citation:
Assignee:
Redren Technologies, Inc.
International Classes:
H01L31/09; G01T1/24; H01L31/18; G01T1/29; H01L27/14; H01L31/0203; H01L31/0224
Attorney, Agent or Firm:
Hatsushi Shimizu
Toshi Gobe
Koichi Niimi
Tomohiko Kobayashi
Shinichi Watanabe
Ryuichi Inoue
Masato Ozeki
Toshi Gobe
Koichi Niimi
Tomohiko Kobayashi
Shinichi Watanabe
Ryuichi Inoue
Masato Ozeki