Title:
半極性自立基板の製造方法
Document Type and Number:
Japanese Patent JP7328230
Kind Code:
B2
Abstract:
The present invention provides a method for producing a semi-polar self-supporting substrate, in which a preparation step (S10) wherein a semi-polar seed substrate that is composed of a group III nitride semiconductor is prepared, said seed substrate having a semi-polar surface as a main surface, a group III nitride semiconductor layer formation step (S20) wherein a group III nitride semiconductor layer is formed by epitaxially growing a group III nitride semiconductor on the semi-polar seed substrate, a cut-out step (S30) wherein a semi-polar self-supporting substrate, which has the semi-polar surface as a main surface, is cut out from the group III nitride semiconductor layer, and a processing step (S40) wherein all the remaining group III nitride semiconductor layer is removed from the semi-polar seed substrate on which a part of the group III nitride semiconductor layer remains are performed, and subsequently the group III nitride semiconductor layer formation step and the cut-out step are performed, while reusing the semi-polar seed substrate.
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Inventors:
Hiroki Goto
Yujiro Ishihara
Shoichi Fuda
Yujiro Ishihara
Shoichi Fuda
Application Number:
JP2020540213A
Publication Date:
August 16, 2023
Filing Date:
August 07, 2019
Export Citation:
Assignee:
Furukawa Metal Co., Ltd.
International Classes:
C30B29/38; C23C16/34; C30B25/20; H01L21/205
Domestic Patent References:
| JP2018027893A | ||||
| JP2018104279A | ||||
| JP2015059069A | ||||
| JP2003517416A |
Foreign References:
| WO2017164233A1 |
Attorney, Agent or Firm:
Shinji Hayami