MANUFACTURING METHOD OF SEMICONDUCTOR CMP POLISHING PAD

Title:

MANUFACTURING METHOD OF SEMICONDUCTOR CMP POLISHING PAD

Document Type and Number:

Japanese Patent JP2005342820

Kind Code:

A

Abstract:

To provide a manufacturing method of a polishing pad extremely effective in producing of a chemical mechanical polishing such as a semiconductor wafer capable of suppressing excessive consumption of polishing slurry, properly holding polishing slurry between a polished element and a polishing pad, suppressing variation of polishing amount in a wafer surface, and improving stability with time of a polishing rate to wear of the polishing pad.

The manufacturing method of a semiconductor CMP polishing pad includes a step for punching by a cylindrical cutting edge and forming a large number of through-holes penetrating a polishing layer from a front surface to a back surface. The cylindrical cutting edge is 0.1 to 0.5 mm in cutting edge width, and 0.05 to 0.2 in tanα value in the case that cutting angle is made to be α.

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Inventors:

WATANABE KIMIHIRO
NAKAI YOSHIYUKI
KIMURA TAKESHI
NAKAMORI MASAHIKO
YAMADA TAKATOSHI
SHIMOMURA TETSUO

Application Number:

JP2004163423A

Publication Date:

December 15, 2005

Filing Date:

June 01, 2004

Export Citation:

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Assignee:

TOYO TIRE & RUBBER CO

International Classes:

B24B37/20; B24B37/24; B24B37/26; B26F1/02; H01L21/304; (IPC1-7): B26F1/02; B24B37/00; H01L21/304

Attorney, Agent or Firm:

Aoyama Aoi
Muneo Yamamoto
Yuko Goto

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