MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE HAVING FERROELECTRIC CAPACITY

Japanese Patent JP3623427

B

PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor having a ferroelectric capacity capable of obtaining the characteristic of an equivalent transistor when heat treatment by hydrogen is performed in a final process without deteriorating the characteristic of a ferroelectric substance.
SOLUTION: An interlayer insulation film 5, a contact 7 and wirings 8a, 8b are formed on MOS transistors 4a, 4b formed on a silicon board 1, and further an interlayer insulation film 9 and a contact 10 is formed. Heat treatment is performed at about 300-500°C for about 5-60 minutes in a hydrogen atmosphere diluted by hydrogen or nitrogen as first heat treatment, and a defect produced by the MOS transistor, an insulation film formation process or the like is restored. After a ferroelectric substance 11 connected to one diffusion layer of the MOS transistor 4b, the wiring, an electrode 17 and the like are formed, heat treatment is performed about 300-500°C for about 5-60 minutes in nitrogen as second heat treatment. Thereby another defect produced after the first heat treatment is restored.

Nakura, Takeshi
Mori, Hidemitsu
Takahashi, Seiichi

JP2000000121541

December 03, 2004

April 21, 2000

Click for automatic bibliography generation  

NEC CORP

H01L27/10; H01L21/02; H01L21/3105; H01L21/8242; H01L21/8246; H01L27/105; H01L27/108; H01L21/314; (IPC1-7): H01L27/105

Previous Patent: MANUFACTURE OF RECTANGULAR LITHIUM SECONDARY BATTERY

Next Patent: WASTE COLLECTING BOX