To provide an inspection method that accurately detects a low reliable transistor with low stress in a shorter time than a bias-temperature (BT) test, and to efficiently manufacture a highly reliable electronic apparatus by determining a highly reliable transistor in a shorter time than the BT test.

The reliability of a transistor can be determined by performing Vg-Id measurement while the transistor is irradiated with light, because the hysteresis characteristic obtained as a result of the measurement is correlated with the result of a BT test. This can provide an inspection method that accurately detects a low reliable transistor with low stress in a shorter time than the BT test.