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Title:
半導体装置の製造方法、及び本方法により製造される半導体装置
Document Type and Number:
Japanese Patent JP4891224
Kind Code:
B2
Abstract:
A semiconductor device comprises a semiconductor substrate (110) having a patterned interconnect layer (120) formed thereon. A first capacitor (210), a second capacitor (220), and a resistor (230) are formed over the interconnect layer. The first capacitor comprises a layer of electrode material and a first number of dielectric layers. The second capacitor comprises the layer of electrode material and a second number of dielectric layers. The first number of dielectric layers is greater than he second number of dielectric layers such that the first capacitor has a higher capacitance per unit area than does the second capacitor.

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Inventors:
Remmel, Thomas Peas.
Calpat, Sri Ram
Miller, Melby F.
Thatcher, Peter
Application Number:
JP2007502815A
Publication Date:
March 07, 2012
Filing Date:
February 10, 2005
Export Citation:
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Assignee:
Freescale Semiconductor, Inc.
International Classes:
H01L27/04; H01L21/02; H01L21/20; H01L21/3205; H01L21/822; H01L21/8242; H01L23/52; H01L27/06; H01L27/108; H01L29/00; H01L29/76; H01L29/94; H01L31/119
Domestic Patent References:
JP2004507105A2004-03-04
JP2002141417A2002-05-17
JPH11145387A1999-05-28
JP2001274340A2001-10-05
JP2000307219A2000-11-02
Attorney, Agent or Firm:
Mamoru Kuwagaki



 
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