Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2001110769
Kind Code:
A
Abstract:
To provide a semiconductor device which is excellent in RC property, by forming a cap film avoiding the problem caused by the dishing of the cap film or the remaining sidewall of the recess part of the cap film.
This manufacturing method has the first step of polishing with a selection ratio where the polishing speed of a cap film)/(the polishing speed of an insulating film)=R1, and the second step polish of performing the polish at a selection ratio where the polishing speed of the cap film)/(the polishing speed of the insulating film)=R2, and each polish is performed, using slurry where R1>R2.
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Inventors:
FUKUSHIMA MASARU
YANO HIROYUKI
MINAMI FUKUGAKU
YANO HIROYUKI
MINAMI FUKUGAKU
Application Number:
JP28240599A
Publication Date:
April 20, 2001
Filing Date:
October 04, 1999
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/304; (IPC1-7): H01L21/304
Attorney, Agent or Firm:
Togawa Hideaki
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