MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

Japanese Patent JP2005244178

A

To provide a semiconductor device manufacturing method, capable of improving the reliability and electrical property of a Cu film accompanied with a barrier metal film and to provide a efficient and easy manufacturing method of the semiconductor device with improved reliability and electrical characteristics.

In a recessed part 5 that is formed in an insulating film on a substrate 1, there are provided a first barrier metal film 6, a second barrier metal film 7, and a third barrier metal film 8, in such a manner that they are stacked in order. Each of the barrier metal films 6, 7, and 8 comprises at least one metallic element, belonging to either one group of a group 4-A, a group 5-A, and a group 6-A, respectively. The second barrier metal film 7 is deposited by at least one method of a CVD method and an ALD method. On the third barrier metal film 8, the Cu films 9 and 10 are provided, to fill in the recessed part 5 without opening to atmosphere.

OMOTO SEIICHI
AZUMA KAZUYUKI
YAMAGUCHI HITOMI
EZAWA HIROKAZU
KATADA TOMIO
SAKATA ATSUKO

JP2004381583A

September 08, 2005

December 28, 2004

Click for automatic bibliography generation  

TOSHIBA CORP

H01L21/28; H01L21/00; H01L21/3205; H01L21/44; H01L21/4763; H01L21/768; H01L23/52; H01L23/522; H01L23/532; H01L29/76; H01L31/062; H01L31/119; (IPC1-7): H01L21/3205; H01L21/28

Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto

Previous Patent: OXIDE FILM FORMATION METHOD FOR SEMICONDUCTOR ELEMENT

Next Patent: WET CLEANING METHOD OF MATERIAL SURFACE AND MANUFACTURING PROCESS OF ELECTRONIC, OPTICAL OR OPTOELEC...