Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2008218785
Kind Code:
A
Abstract:
To provide a manufacturing method of a semiconductor device which contains a good quality SiN surface protection film having a small gate leak current and small current collapse.
In the manufacturing method of the semiconductor device, at least one thin film layer is formed on a substrate while a semiconductor element layer is formed, and the surface protection film made of SiN is formed on the semiconductor element layer by a CVD method. At the step of forming the SiN surface protection film, reaction gases SiH4 and NH3 are supplied by a carrier gas N2, and under the condition of SiH4/NH35 and N2/SiH475 as an abundance ratio of each gas, the SiH4gas is supplied to the reaction chamber at a flow rate of 20 sccm or less.
Inventors:
MARUI TOSHIHARU
HOSHI SHINICHI
TODA NORIHIKO
HOSHI SHINICHI
TODA NORIHIKO
Application Number:
JP2007055368A
Publication Date:
September 18, 2008
Filing Date:
March 06, 2007
Export Citation:
Assignee:
OKI ELECTRIC IND CO LTD
International Classes:
H01L21/318; C23C16/42; H01L21/28; H01L21/283; H01L21/338; H01L21/768; H01L23/522; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Motohiko Fujimura