Title:
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2011187502
Kind Code:
A
Abstract:
To provide a manufacturing method of a semiconductor device capable of easily peeling a transfer source substrate when making the semiconductor device by transferring a layer to be transferred formed on the transfer source substrate to a transfer destination substrate.
The method includes a step of forming a release layer 2 on a surface of the transfer source substrate 1, a step of forming the layer 5 to be transferred on the release layer 2, a step of forming a release aid layer 6 having a tensile stress on the rear face of the transfer source substrate 1, a step of adhering the transfer destination substrate 8 on the layer 5, and a step of peeling the layer 5 by irradiating light or heat to the release layer 2.
Inventors:
ONODERA KATSUMI
Application Number:
JP2010048283A
Publication Date:
September 22, 2011
Filing Date:
March 04, 2010
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L27/12; H01L21/02; H01L21/336; H01L29/786
Attorney, Agent or Firm:
Kazuya Nishi
Masatake Shiga
Kazunori Onami
Masatake Shiga
Kazunori Onami