To provide a manufacturing method of a semiconductor device capable of forming a metal electrode at low cost while using cutting or grinding work.
A manufacturing method of a semiconductor device comprises the steps of: forming a base electrode 14 on a principal surface 12a of a semiconductor substrate 12; forming a protection film 16 covering the base electrode and forming an opening 16a for exposing the base electrode to the protection film; forming a first metal film 22 so as to cover a surface of the base electrode visible from the protection film and the opening; patterning the first metal film by removing the portion of the protection film positioned on a reference surface P1 provided in parallel to a suction stage 30 and the portion of the first metal film by cutting in a state in which the semiconductor substrate in which the first metal film is formed is sucked and fixed at the suction stage using a rear surface 12b as a mounting surface; and thinning the thickness of the semiconductor substrate to a prescribed thickness by grinding the rear surface of the semiconductor substrate after the patterning step.
AKAMATSU KAZUO
KASEDA KANAME
INAGAKI HIDEYA
| JP2006186304A | 2006-07-13 | |||
| JPH10199925A | 1998-07-31 | |||
| JP2003045958A | 2003-02-14 |
Taihei Nonobe
Takanori Kubo