Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2022011827
Kind Code:
A
Abstract:
To provide a method for manufacturing a semiconductor device capable of reducing damage to a semiconductor part and an insulation film covering the semiconductor part.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: preparing a semiconductor wafer including a plurality of semiconductor parts, a support substrate supporting the plurality of semiconductor parts, an insulation film provided on a side surface of the semiconductor part, and a metal portion including a first region provided between the semiconductor parts and the support substrate and a second region provided in an upper part of the support substrate between the plurality of semiconductor parts in a top view; forming a metal film formed in at least a part of the insulation film provided on the side surface of the semiconductor part and including an opening in an upper part of the second region; removing a part of the second region by irradiating the second region of the metal portion with a laser beam via the opening of the metal film; and cutting the support substrate along the portion from which the second region is removed.SELECTED DRAWING: Figure 1
Inventors:
KAGEYAMA HIROAKI
Application Number:
JP2020113210A
Publication Date:
January 17, 2022
Filing Date:
June 30, 2020
Export Citation:
Assignee:
NICHIA KAGAKU KOGYO KK
International Classes:
H01L21/301; B23K26/364
Attorney, Agent or Firm:
Yamato Kento
Junichi
Haruhiko Ema
Junichi
Haruhiko Ema