METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Japanese Patent JP2023173119

A

To provide a method for manufacturing a semiconductor device capable of increasing a bonding strength between organic insulation films in hybrid bonding.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: polishing surfaces of a first organic insulation film and a first electrode of a first semiconductor substrate; polishing surfaces of a second organic insulation film and a second electrode of a second semiconductor substrate; individualizing the second semiconductor substrate and acquiring a plurality of semiconductor chips including an insulation film portion corresponding to the second organic insulation film and a second electrode; cleaning surfaces of the plurality of semiconductor chips; bonding the first organic insulation film and the insulation film portion to each other; and bonding the first electrode and the second electrode. The first and second organic insulation films are formed from a resin material whose glass transition temperature is higher than or equal to 250°C. The cleaning step cleans the surface of the insulation film portion in the semiconductor chip after cleaning with an acidic aqueous solution containing a citric acid or an ascorbic acid so that a surface roughness Ra of the surface is kept at 1nm or lower.SELECTED DRAWING: Figure 3

JP2001023923	MANUFACTURE OF CONTACT PAD
JPS5386573	STRUCTURE OF CHIP SUBSTRATE
JP2570626	CONNECTION STRUCTURE AND CONNECTION METHOD FOR BOARD

SHIRASAKA TOSHIAKI
OKUDA TADASHI
SHIBATA TOMOAKI
FUKUZUMI SHIZU
FUKUSHIMA TAKASHI
MARIAPPAN MURUGESAN
KOYANAGI MITSUMASA

JP2022085137A

December 07, 2023

May 25, 2022

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RESONAC HOLDINGS CORP
UNIV TOHOKU

H01L21/60; H01L21/304; H01L25/07

Yoshiki Hasegawa
Yoshinori Shimizu
Hiroyuki Hirano

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