Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4083821
Kind Code:
B2
Abstract:
In a producing a thin film transistor, a solution containing a metal element for promoting crystallization of silicon is added in contact with an amorphous silicon film, and then a silicide layer is formed by heating process. Further, after a region as crystal growth nucleus-is formed by patterning the silicide layer, laser light is irradiated during heating process. As a result, crystal-growth is performed from the region as crystal growth nucleus in the amorphous silicon film, thereby to form monodomain regions corresponding to a single crystal. Also, before the solution is added, the amorphous silicon film may be subjected to plasma treatment 30.
Inventors:
Shunpei Yamazaki
Naoto Kusumoto
Satoshi Teramoto
Naoto Kusumoto
Satoshi Teramoto
Application Number:
JP13290095A
Publication Date:
April 30, 2008
Filing Date:
May 06, 1995
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/02; H01L21/268; H01L21/322; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/786; G02F1/1362
Attorney, Agent or Firm:
Nobuyuki Watanabe