Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP4809600
Kind Code:
B2
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Inventors:
Yugo Goto
Yumiko Fukumoto
Toru Takayama
Junya Maruyama
Takuya Tsurume
Yumiko Fukumoto
Toru Takayama
Junya Maruyama
Takuya Tsurume
Application Number:
JP2004314019A
Publication Date:
November 09, 2011
Filing Date:
October 28, 2004
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L27/12; H01L21/02; H01L21/336; H01L29/786
Domestic Patent References:
| JP2003229548A | ||||
| JP2003174153A | ||||
| JP2004535664A | ||||
| JP7263291A | ||||
| JP11168053A |
Foreign References:
| WO2002084721A1 |