Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5106703
Kind Code:
B1
Abstract:
A formation of a gate electrode provided over an oxide semiconductor layer of a thin film transistor is performed together with a patterning of the oxide semiconductor layer.
Inventors:
Kengo Akimoto
Daisuke Kawae
Daisuke Kawae
Application Number:
JP2012182998A
Publication Date:
December 26, 2012
Filing Date:
August 22, 2012
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/1368; H01L29/786; H01L21/28; H01L21/336; H01L29/423; H01L29/49; H01L51/50; H05B33/14; H05B44/00
Domestic Patent References:
| JP2008218495A | ||||
| JP2008108985A | ||||
| JP2004199049A | ||||
| JP10173195A | ||||
| JP5152330A |