Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5137916
Kind Code:
B2
Abstract:
The present invention provides a manufacturing method of a semiconductor device, which is able to improve on-current and mobility of a polycrystal TFT without disturbing a high integration level, and also provide a semiconductor device obtained in accordance with the manufacturing method. The manufacturing method comprises steps of adding a catalytic element to a semiconductor film and heating the semiconductor film to form a more crystallized first region; forming a less crystallized second region than the first region; irradiating first laser light to the first region to form a more crystallized third region than the first region; irradiating second laser light to the second region to form a more crystallized fourth region than the second region; and patterning the third region to form a first island-shaped region and the fourth region to form a second island-shaped region, wherein the first laser light has the same energy density from the second laser light, and a scan speed of the first laser light is faster than that of the second laser light.
Inventors:
Keika Moriwaka
Application Number:
JP2009184098A
Publication Date:
February 06, 2013
Filing Date:
August 07, 2009
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/786
Domestic Patent References:
| JP9092834A | ||||
| JP2032527A | ||||
| JP1059807A | ||||
| JP8228006A | ||||
| JP6252398A | ||||
| JP1162376A |
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