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Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5191209
Kind Code:
B2
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Inventors:
Tatsuya Mizoi
Hidekazu Miyairi
Akihisa Shimomura
Yoji Nagano
Tomoaki Moriwaka
Application Number:
JP2007280159A
Publication Date:
May 08, 2013
Filing Date:
October 29, 2007
Export Citation:
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Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; G02F1/1368; H01L21/20; H01L29/786
Domestic Patent References:
JP2005340373A
JP2007043140A
JP2006135058A



 
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