Title:
半導体素子の製造方法
Document Type and Number:
Japanese Patent JP5402222
Kind Code:
B2
Inventors:
Otari 靖 length
Application Number:
JP2009111082A
Publication Date:
January 29, 2014
Filing Date:
April 30, 2009
Export Citation:
Assignee:
Nichia Chemical Industries Corp.
International Classes:
H01S5/22