Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP5427753
Kind Code:
B2
Abstract:
Providing a semiconductor fabricating apparatus using a laser crystallization technique for enhancing the processing efficiency for substrate and for increasing the mobility of a semiconductor film. The semiconductor fabricating apparatus of multi-chamber system includes a film formation equipment for forming a semiconductor film, and a laser irradiation equipment. The laser irradiation equipment includes first means for controlling a laser irradiation position relative to an irradiation object, second means (laser oscillator) for emitting laser light, third means (optical system) for processing or converging the laser light, and fourth means for controlling the oscillation of the second means and for controlling the first means in a manner that a beam spot of the laser light processed by the third means may cover a place determined based on data on a mask configuration (pattern information).
Inventors:
Shunpei Yamazaki
Hisashi Otani
▲ひろ▼木 正明
Koichiro Tanaka
Aiko Shiga
Mai Akiba
Hisashi Otani
▲ひろ▼木 正明
Koichiro Tanaka
Aiko Shiga
Mai Akiba
Application Number:
JP2010250753A
Publication Date:
February 26, 2014
Filing Date:
November 09, 2010
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
G02F1/13; H01L21/20; B23K26/12; G02F1/1368; H01L21/336; H01L21/8238; H01L27/08; H01L27/088; H01L27/092; H01L29/786; H01L51/50; H05B33/02
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