Manufacturing method of semiconductor device

Title:

Manufacturing method of semiconductor device

Document Type and Number:

Japanese Patent JP5939184

Kind Code:

B2

Abstract:

A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

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Inventors:

Nobuyoshi Fujii
Kenya Hagimoto
Kenichi Aoyagi
Emiko Tagawa

Application Number:

JP2013060691A

Publication Date:

June 22, 2016

Filing Date:

March 22, 2013

Export Citation:

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Assignee:

ソニー株式会社

International Classes:

H01L27/146; H01L21/02; H01L21/768; H01L27/00; H04N5/374

Domestic Patent References:

JP2010066723A

Foreign References:

US20130009321

Attorney, Agent or Firm:

Yoshio Inamoto
Takashi Nishikawa

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