Title:
Manufacturing method of semiconductor device
Document Type and Number:
Japanese Patent JP5949784
Kind Code:
B2
Abstract:
The present technology includes: bonding a device formation side of a first substrate having a first device and a device formation side of a second substrate having a second device in opposition to each other; forming a protective film on at least an edge of the second substrate having the second device; and reducing a thickness of the first substrate.
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Inventors:
Nobuyoshi Fujii
Kenichi Aoyagi
Kenya Hagimoto
Iwamoto Hayato
Kenichi Aoyagi
Kenya Hagimoto
Iwamoto Hayato
Application Number:
JP2013554264A
Publication Date:
July 13, 2016
Filing Date:
January 08, 2013
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L27/146; H01L25/065; H01L25/07; H01L25/18; H01L27/00; H01L27/14
Domestic Patent References:
| JP2005322745A | ||||
| JP2005285988A | ||||
| JP2012009725A | ||||
| JP2007234725A |
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office