Title:
半導体装置の作製方法
Document Type and Number:
Japanese Patent JP6851768
Kind Code:
B2
Abstract:
A semiconductor device including an oxide conductor with high conductivity and high transmittance is provided. A manufacturing method for a semiconductor device includes the steps of: forming an oxide semiconductor over a first insulator; forming a second insulator over the first insulator and the oxide semiconductor; forming a first conductor over the second insulator; forming an etching mask over the first conductor; forming a second conductor including a region overlapping with the oxide semiconductor by etching the first conductor with use of the etching mask as a mask; removing the etching mask; and performing heat treatment after forming a hydrogen-containing layer over the second insulator and the second conductor.
Inventors:
Kengo Akimoto
Gyoutoku Shima
Gyoutoku Shima
Application Number:
JP2016204232A
Publication Date:
March 31, 2021
Filing Date:
October 18, 2016
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/336; H01L21/225; H01L21/477; H01L21/82; H01L21/822; H01L21/8234; H01L21/8236; H01L21/8238; H01L21/8242; H01L27/04; H01L27/088; H01L27/092; H01L27/108; H01L27/146; H01L29/786
Domestic Patent References:
| JP2015179810A | ||||
| JP2014093433A | ||||
| JP2014030000A | ||||
| JP2007220817A | ||||
| JP2014199406A | ||||
| JP2015130490A | ||||
| JP2014238577A |
Foreign References:
| US20150162452 |