Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6987034
Kind Code:
B2
Abstract:
According a method for manufacturing a semiconductor device of the present invention, a surface protection film having an elastic modulus of 2 GPa or more is formed on a first main surface of a semiconductor wafer where an element structure is formed, the semiconductor wafer is placed on a stage with the first main surface facing the stage, and a second main surface of the semiconductor wafer opposite to the first main surface is ground.
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Inventors:
Shunichi Watanabe
Application Number:
JP2018169281A
Publication Date:
December 22, 2021
Filing Date:
September 11, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L21/304; B24B7/22
Domestic Patent References:
| JP2006261370A | ||||
| JP2002203828A | ||||
| JP2069938A | ||||
| JP2004006630A |
Attorney, Agent or Firm:
Yoshitake Hidetoshi
Takahiro Arita
Takahiro Arita
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