Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7055534
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor body, first to third electrodes provided on the semiconductor body, and a control electrode. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes first to sixth layers. The second layer of a second conductivity type is selectively provided between the first layer of a first conductivity type and the first electrode. The third layer of the first conductivity type is selectively provided between the second layer and the first electrode. The fourth layer of the second conductivity type is provided between the first layer and the second and third electrodes. The fifth layer of the first conductivity type is selectively provided in the fourth layer and electrically connected to the first electrode. The sixth layer of the first conductivity type is provided in the fourth layer, and electrically connected to the third electrode.
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Inventors:
Nao Ichijo
Shotaro Ono
Hiroaki Yamashita
Shotaro Ono
Hiroaki Yamashita
Application Number:
JP2018168849A
Publication Date:
April 18, 2022
Filing Date:
September 10, 2018
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation
International Classes:
H01L21/329; H01L29/78; H01L21/336; H01L21/8234; H01L27/06; H01L29/866
Domestic Patent References:
| JP2000294779A | ||||
| JP2005142553A | ||||
| JP11154746A |
Foreign References:
| US20050082577 |
Attorney, Agent or Firm:
Hyuga Temple Masahiko
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
Junichi Kozaki
Hiroshi Ichikawa
Satoshi Shirai
Uchida Keito
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