Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7442428
Kind Code:
B2
Abstract:
A manufacturing method of a semiconductor device includes: preparing a semiconductor substrate including a first semiconductor layer made of gallium oxide containing Sn and a second semiconductor layer disposed on the first semiconductor layer and made of n type gallium oxide having a Sn concentration lower than a Sn concentration of the first semiconductor layer; implanting ions of a group 2 element into the second semiconductor layer; and forming a diffusion region, in which the group 2 element diffuses, in a range from a surface of the second semiconductor layer to an interface between the second semiconductor layer and the first semiconductor layer.
Inventors:
Shuhei Ichikawa
Hiroki Miyake
Hiroki Miyake
Application Number:
JP2020206249A
Publication Date:
March 04, 2024
Filing Date:
December 11, 2020
Export Citation:
Assignee:
株式会社デンソー
トヨタ自動車株式会社
株式会社ミライズテクノロジーズ
トヨタ自動車株式会社
株式会社ミライズテクノロジーズ
International Classes:
H01L21/329; H01L21/265; H01L29/06; H01L29/24; H01L29/41; H01L29/47; H01L29/872
Domestic Patent References:
| JP2018137394A | ||||
| JP2013102081A | ||||
| JP2016039194A |
Foreign References:
| WO2016152536A1 | ||||
| WO2019157384A1 |
Attorney, Agent or Firm:
Patent Attorney Corporation Kaiyu International Patent Office
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