Title:
半導体装置、受信機及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7027949
Kind Code:
B2
Abstract:
A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.
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Inventors:
Takahashi Go
Kenichi Kawaguchi
Kenichi Kawaguchi
Application Number:
JP2018031223A
Publication Date:
March 02, 2022
Filing Date:
February 23, 2018
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/337; H01L21/338; H01L29/778; H01L29/808; H01L29/812
Domestic Patent References:
| JP2013110160A | ||||
| JP2002198516A | ||||
| JP2008544521A | ||||
| JP2010503981A | ||||
| JP2009032724A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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