半導体装置の製造方法 - Renesas Electronics Corporation

Title:

半導体装置の製造方法

Document Type and Number:

Japanese Patent JP4803993

Kind Code:

B2

Abstract:

With a fluid insulating material applied on a convex substrate and a fluid insulating material applied on a concave substrate, a columnar conductive portion of the convex substrate is inserted into a hole of the concave substrate. With this, a conductive portion and an internal interconnection are electrically connected with each other via a bump. Therefore, a semiconductor device having a through electrode which enables a size reduction, has high reliability and is easily formed even with a large aspect ratio, and a method of manufacturing the same are obtained.

Inventors:

Yoshihiko Nemoto

Application Number:

JP2004325035A

Publication Date:

October 26, 2011

Filing Date:

November 09, 2004

Export Citation:

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