Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4860068
Kind Code:
B2
Inventors:
High Ryuichi No
Hiroshi Maki
Arihiro Hasebe
Hiroshi Maki
Arihiro Hasebe
Application Number:
JP2001253204A
Publication Date:
January 25, 2012
Filing Date:
August 23, 2001
Export Citation:
Assignee:
Renesas Electronics Corporation
Renesas Electronics East Japan Semiconductor Co., Ltd.
Renesas Electronics East Japan Semiconductor Co., Ltd.
International Classes:
H01L21/52; H01L21/677; H01L21/67; H01L21/68
Domestic Patent References:
| JP4102337A | ||||
| JP9232407A |
Attorney, Agent or Firm:
Yamato Tsutsui