To provide a semiconductor device which eliminates the need for enlarging a space in which a functional device is formed in order to provide a getter which absorbs impurity gas, and to provide its manufacturing method.

An infrared sensor 1A includes a device substrate 2 and a lid substrate 3A. An infrared detection device 4 is formed on the surface of the device substrate. When the device substrate 2 and the lid substrate 3A are joined together, space 5 is formed between the infrared detection device 4 and the lid substrate 3A. The lid substrate 3A is provided with a tubular electrode 7 allowing a signal from the infrared detection device 4 to be taken to the outside. An open end of the tubular electrode 7 is blocked by a sealing member 9A provided with a getter 10A on its internal recess. The space 5 and the tubular electrode 7 are communicated with each other, allowing the impurity gas within the space 5 to pass through the tubular electrode 7 to be absorbed by the getter 10A.

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