Title:
半導体装置の製造方法および半導体装置
Document Type and Number:
Japanese Patent JP5700513
Kind Code:
B2
Abstract:
Provided is a method of manufacturing a semiconductor device of a multilayer wiring structure that comprises a CFx film as an interlayer insulating film, that can make the most of the advantage of the CFx film having a low dielectric constant, and that can prevent degradation of the properties of the CFx film due to CMP. The method of this invention includes (a) forming a CFx film, (b) forming a recess of a predetermined pattern on the CFx film, (c) providing a wiring layer so as to bury the recess and to cover the CFx film, and (d) removing the excess wiring layer on the CFx film other than in the recess by CMP (Chemical Mechanical Polishing), thereby exposing a surface of the CFx film, wherein (e) nitriding the surface of the CFx film is provided before or after (b).
Inventors:
Tadahiro Ohmi
Tani power
Tani power
Application Number:
JP2010228406A
Publication Date:
April 15, 2015
Filing Date:
October 08, 2010
Export Citation:
Assignee:
Tohoku University
International Classes:
C23C16/32; H01L21/768; H01L21/314; H01L21/321; H01L23/532
Domestic Patent References:
| JP2009111251A | ||||
| JP2005064302A | ||||
| JP2005302811A | ||||
| JP2007273873A | ||||
| JP2005354041A |
Foreign References:
| WO2008026520A1 | ||||
| WO2006137384A1 |
Attorney, Agent or Firm:
Kenho Ikeda
Shuichi Fukuda
Shuichi Fukuda