Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6796978
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which includes a polishing method achieving a high polishing rate and excellent hydrophilicity.SOLUTION: In a step of polishing a principal surface 11 of a silicon wafer 10 by slidably contacting the silicon wafer 10 with an abrasive pad 25 while supplying a polishing solution in a semiconductor device manufacturing method, the polishing solution contains silicon dioxide, tetramethylammonium hydroxide, ammonium hydroxide, piperazine and cellulose derivative; and polishing pressure from 5 kPa to 50 kPa is applied to the silicon wafer 10. This makes it possible to polish the principal surface 11 of the silicon wafer 10 at a high polishing rate and excellent hydrophilicity is provided to the principal surface 11 of the polished silicon wafer 10. For this reason, a polishing time can be reduced and a rinse process aiming only a hydrophilic treatment after a polishing process can be omitted thereby to improve productivity of a semiconductor device.SELECTED DRAWING: Figure 2
Inventors:
Takahiko Mitsui
Bando Tsubasa
Bando Tsubasa
Application Number:
JP2016185443A
Publication Date:
December 09, 2020
Filing Date:
September 23, 2016
Export Citation:
Assignee:
Okamoto Machine Tool Co., Ltd.
International Classes:
H01L21/304; B24B37/00; C08K3/36; C08K5/19; C08K5/3462; C08L1/08; C09K3/14
Domestic Patent References:
| JP2004128089A | ||||
| JP2006352042A | ||||
| JP11116942A | ||||
| JP2011061089A | ||||
| JP2014082509A | ||||
| JP2003300151A |
Foreign References:
| WO2004042812A1 | ||||
| CN102766408A | ||||
| WO2011142362A1 |
Attorney, Agent or Firm:
Masahisa Otake