半導体素子の製造方法 - Fuji Electric Systems Co., Ltd.

Title:

半導体素子の製造方法

Document Type and Number:

Japanese Patent JP4590880

Kind Code:

B2

More Like This:

JP2000243968	THIN FILM TRANSISTOR, MANUFACTURE THEREOF, LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME AND MANUFACTURE THEREOF
JPH04179218	MANUFACTURE OF SEMICONDUCTOR EPITAXIAL LAYER
JPS63142807	MANUFACTURE OF SEMICONDUCTOR DEVICE

Inventors:

Haruo Nakazawa
Kazuo Shimoyama
Mitsuaki Kirizawa

Application Number:

JP2004036547A

Publication Date:

December 01, 2010

Filing Date:

February 13, 2004

Export Citation:

Assignee:

Fuji Electric Systems Co., Ltd.

International Classes:

H01L21/20; H01L21/265; H01L21/336; H01L29/739; H01L29/78

Domestic Patent References:

Attorney, Agent or Firm:

Takeshi Hattori

Previous Patent: 液晶装置、液晶装置の駆動回路及びその駆動方法並びに電子機器

Next Patent: ＣＶＤ用気化器、溶液気化式ＣＶＤ装置