Title:
MANUFACTURING METHOD OF SEMICONDUCTOR FILM
Document Type and Number:
Japanese Patent JPS5568652
Kind Code:
A
Abstract:
PURPOSE:To obtain a semiconductor film which contains no harmful substances automatically doped, by providing an amorphous semiconductor film on the surface of an dielectric piece and heating the amorphous semiconductor film to change it into single crystal. CONSTITUTION:After the surface of a sapphire substrate 1 is cleaned up, SiH4 is made into plasma at a relatively low temperature of about 800 deg.C to produce an amorphous Si film 2. At that temperature, no harmful substances are automatically doped from the substrate 1 into the film 2. The surface of the film is heated like pulsation to change the amorphous Si film 2 into a single crystal Si film 3. No harmful substances such as aluminum are automatically doped from the sapphire into the single crystal Si film 3. Therefore, a leakage current is very little when a pn-junction 4 is provided. SiO2, Si3N4 or the like may be used as a dielectric substance instead of the sapphire.
Inventors:
IWAMATSU SEIICHI
Application Number:
JP14116378A
Publication Date:
May 23, 1980
Filing Date:
November 17, 1978
Export Citation:
Assignee:
CHO LSI GIJUTSU KENKYU KUMIAI
International Classes:
H01L21/20; H01L21/324; H01L21/84; H01L21/86; (IPC1-7): H01L21/20; H01L21/324; H01L21/84