Title:
半導体光デバイスの製造方法および半導体光デバイス
Document Type and Number:
Japanese Patent JP6452651
Kind Code:
B2
Abstract:
Provided is a method of manufacturing a semiconductor optical device, which makes it possible to reduce the thickness of a semiconductor optical device including InGaAsP-based III-V compound semiconductor layers containing at least In and P to a thickness smaller than that of conventional devices, and provide a semiconductor optical device. The method of manufacturing a semiconductor optical device includes a step of forming a semiconductor laminate on the InP growth substrate; a step of bonding the semiconductor laminate to the support substrate formed from a Si substrate, with at least the metal bonding layer therebetween; and a step of removing the InP growth substrate.
Inventors:
Junpei Yamamoto
Tetsuya Ikuta
Tetsuya Ikuta
Application Number:
JP2016129547A
Publication Date:
January 16, 2019
Filing Date:
June 30, 2016
Export Citation:
Assignee:
dowa Electronics Co., Ltd.
International Classes:
H01L33/30; H01L33/10
Domestic Patent References:
| JP2015015393A | ||||
| JP2008283096A | ||||
| JP2015032598A | ||||
| JP6224404A |
Foreign References:
| WO2014167773A1 | ||||
| WO2013073485A1 |
Attorney, Agent or Firm:
Kenji Sugimura
Toshio Fukui
Toshio Fukui