To provide a semiconductor sensor capable of manufacturing a resistor more appropriately as a semiconductor having a substantially uniform carrier concentration, and to provide its manufacturing method.
An SOI (silicon on insulator) substrate where a silicon oxide film 20 and a single crystal silicon film 30 are deposited on a semiconductor substrate 10 is prepared (Fig. (a)). In the steps shown on Fig. (b)-Fig.(d), ions are implanted in the single crystal silicon film 30 with implantation energy quantities of "30 keV", "100 keV" and "170 keV". Upon ending three times of ion implantation, impurities are diffused in the single crystal silicon film 30 and activated by heat treatment. Impurity concentration is made substantially uniform from the upper surface to the lower surface of the single crystal silicon film 30 through that heat treatment.
COPYRIGHT: (C)2004,JPO&NCIPI
Hiroyuki Wado
Toshimasa Yamamoto
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Makoto Onda